Gate-tunable graphene quantum dot and Dirac oscillator

Dirac gap - induced graphene quantum dot in an electrostatic potential

A spatially modulated Dirac gap in a graphene sheet leads to charge confinement, thus enabling a graphene quantum dot to be formed without the application of external electric and magnetic fields [G. Giavaras and F. Nori, Appl. Phys. Lett. 97, 243106 (2010)]. This can be achieved provided the Dirac gap has a local minimum in which the states become localized. In this work, the physics of such a...

Type-II quantum-dot-in-nanowire structures with large oscillator strength for optical quantum gate applications

Artificial graphene as a tunable Dirac material

Marco Polini, ∗ Francisco Guinea, Maciej Lewenstein, 4 Hari C. Manoharan, 6 and Vittorio Pellegrini NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, I-56126 Pisa, Italy Instituto de Ciencia de Materiales de Madrid (CSIC), Sor Juana Inés de la Cruz 3, E-28049 Madrid, Spain ICFO Institut de Ciències Fotòniques, Mediterranean Technology Park, Av. Carl Friedrich Gauss 3, E-08860 Castell...

Quantum Dot Gate InGaAs FETs

This paper describes using wide energy gap lattice-matched II-VI layers, such as ZnSeTeZnMgSeTe, serving as a high-k gate dielectric for n-channel enhancement mode InGaAs field effect transistors (FETs). The thrust is to reduce interface states at the channel-gate insulator boundary while providing sufficient barrier height to confine the carriers in the channel created by inversion. In additio...

Gate-tunable photoemission from graphene transistors.

In this Letter, we report gate-tunable X-ray photoelectron emission from back-gated graphene transistors. The back-gated transistor geometry allows us to study photoemission from graphene layer and the dielectric substrate at various gate voltages. Application of gate voltage electrostatically dopes graphene and shifts the binding energy of photoelectrons in various ways depending on the origin...